GaN on Si is not studied much because of the cracking problem in GaN films which becomes worse at a higher temperature. Therefore, our focus is to grow the good quality and less stressed GaN films on Si, using the low-temperature atomic layer deposition (ALD) method. In the future, our plan is to design and fabricate GaN/Si devices and study their reliability, performance for industrial applications.
https://coutumems.com/wp-content/uploads/2017/08/thin-films.jpg 200 252 awp-admin https://coutumens.com/wp-content/uploads/2017/09/mu.png awp-admin2017-08-27 13:04:182022-08-30 21:26:38Thin Films
Opus College of Engineering
Dept. of Electrical and Computer Engineering
Engineering Hall 248
1637 W. Wisconsin Avenue
Milwaukee, WI 53233