Thin Films

Gallium nitride (GaN), a wide bandgap semiconductor, has few superior material properties such as: a large electric breakdown field, high electron velocity, and mobility, which makes it a potential candidate for next generation electrical and optoelectrical applications. At present, most of the GaN growth is done on relatively expensive substrates i.e. sapphire and SiC by using high-temperature deposition methods (MBE, MOCVD etc). On the other hand, Silicon substrates are cheap, available in large diameters and have well characterized electrical and thermal properties. Despite all these advantages, GaN on Si is not studied much because of the cracking problem in GaN films which becomes worse at a higher temperature. Therefore, our focus is to grow the good quality and less stressed GaN films on Si, using the low-temperature atomic layer deposition (ALD) method. In the future, our plan is to design and fabricate GaN/Si devices and study their reliability, performance for industrial applications.